SEMICONDUCTOR OPTICAL DEVICE HAVING AN AIR MEDIA LAYER AND THE METHOD FOR FORMING THE AIR MEDIA LAYER THEREOF

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	LU Tien-Chang	en_US
dc.contributor.author	Huang Huei-Min	en_US
dc.contributor.author	Kuo Hao-Chung	en_US
dc.contributor.author	Wang Shing-Chung	en_US
dc.date.accessioned	2014-12-16T06:14:58Z	-
dc.date.available	2014-12-16T06:14:58Z	-
dc.date.issued	2013-06-13	en_US
dc.identifier.govdoc	H01L029/16	zh_TW
dc.identifier.govdoc	H01L029/20	zh_TW
dc.identifier.govdoc	H01L021/20	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/105037	-
dc.description.abstract	A method for fabricating air media layer within the semiconductor optical device is provided. The step of method includes a substrate is provided, a GaN thin film is formed on the substrate, a sacrificial layer is formed on the GaN thin film, and a nitride-containing semiconductor layer is formed on the sacrificial layer. The semiconductor optical device is immersed with an acidic solution to remove the portion of sacrificial layer to form an air media layer around the residual sacrificial layer.	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	SEMICONDUCTOR OPTICAL DEVICE HAVING AN AIR MEDIA LAYER AND THE METHOD FOR FORMING THE AIR MEDIA LAYER THEREOF	zh_TW
dc.type	Patents	en_US
dc.citation.patentcountry	USA	zh_TW
dc.citation.patentnumber	20130146896	zh_TW
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