Electrodeposited Nano-Twins Copper Layer and Method of Fabricating the Same

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DC Field	Value	Language
dc.contributor.author	CHEN Chih	en_US
dc.contributor.author	TU King-Ning	en_US
dc.contributor.author	LIU Taochi	en_US
dc.date.accessioned	2014-12-16T06:14:59Z	-
dc.date.available	2014-12-16T06:14:59Z	-
dc.date.issued	2013-05-16	en_US
dc.identifier.govdoc	C30B007/12	zh_TW
dc.identifier.govdoc	C30B029/02	zh_TW
dc.identifier.govdoc	C30B029/60	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/105050	-
dc.description.abstract	An electrodeposited nano-twins copper layer, a method of fabricating the same, and a substrate comprising the same are disclosed. According to the present invention, at least 50% in volume of the electrodeposited nano-twins copper layer comprises plural grains adjacent to each other, wherein the said grains are made of stacked twins, the angle of the stacking directions of the nano-twins between one grain and the neighboring grain is between 0 to 20 degrees. The electrodeposited nano-twins copper layer of the present invention is highly reliable with excellent electro-migration resistance, hardness, and Young's modulus. Its manufacturing method is also fully compatible to semiconductor process.	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	Electrodeposited Nano-Twins Copper Layer and Method of Fabricating the Same	zh_TW
dc.type	Patents	en_US
dc.citation.patentcountry	USA	zh_TW
dc.citation.patentnumber	20130122326	zh_TW
Appears in Collections:	Patents

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