標題: | Electric connecting structure comprising preferred oriented Cu6Sn5 grains and method for fabricating the same |
作者: | CHEN Chih LIN Han-Wen |
公開日期: | 14-十一月-2013 |
摘要: | An electric connecting structure comprising preferred oriented Cu6Sn5 grains and a method for fabricating the same are disclosed. The method of the present invention comprises steps: (A) providing a first substrate; (B) forming a first nano-twinned copper layer on part of a surface of the first substrate; (C) using a solder to connect the first substrate with a second substrate having a second electrical pad, in which the second electrical pad comprises a second nano-twinned copper layer, and the solder locates between the first nano-twinned copper layer and the second nano-twinned copper layer; and (D) reflowing at the temperature of 200° C. to 300° C. to transform at least part of the solder into an intermetallic compound (IMC) layer, in which the IMC layer comprises plural Cu6Sn5 grains with a preferred orientation; wherein at least 50% in volume of the first and second nano-twinned copper layer comprises plural grains. |
官方說明文件#: | H01R013/03 H01R043/02 |
URI: | http://hdl.handle.net/11536/104980 |
專利國: | USA |
專利號碼: | 20130302646 |
顯示於類別: | 專利資料 |