標題: Electric connecting structure comprising preferred oriented Cu6Sn5 grains and method for fabricating the same
作者: CHEN Chih
LIN Han-Wen
公開日期: 14-Nov-2013
摘要: An electric connecting structure comprising preferred oriented Cu6Sn5 grains and a method for fabricating the same are disclosed. The method of the present invention comprises steps: (A) providing a first substrate; (B) forming a first nano-twinned copper layer on part of a surface of the first substrate; (C) using a solder to connect the first substrate with a second substrate having a second electrical pad, in which the second electrical pad comprises a second nano-twinned copper layer, and the solder locates between the first nano-twinned copper layer and the second nano-twinned copper layer; and (D) reflowing at the temperature of 200° C. to 300° C. to transform at least part of the solder into an intermetallic compound (IMC) layer, in which the IMC layer comprises plural Cu6Sn5 grains with a preferred orientation; wherein at least 50% in volume of the first and second nano-twinned copper layer comprises plural grains.
官方說明文件#: H01R013/03
H01R043/02
URI: http://hdl.handle.net/11536/104980
專利國: USA
專利號碼: 20130302646
Appears in Collections:Patents


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