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dc.contributor.authorCHIN ALBERTen_US
dc.date.accessioned2014-12-16T06:15:01Z-
dc.date.available2014-12-16T06:15:01Z-
dc.date.issued2013-02-07en_US
dc.identifier.govdocH01L029/78zh_TW
dc.identifier.govdocH01L021/336zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/105080-
dc.description.abstractThe present invention discloses a metal-gate/high-κ/Ge MOSFET with laser annealing and a fabrication method thereof. The fabrication method comprises the following steps: forming a substrate; implanting a source area and a drain area on the substrate; activating the source area and the drain area by first laser light; depositing gate dielectric material on the substrate; annealing high-κ dielectric material by second laser light; and forming a metal gate on the high-κ dielectric material.zh_TW
dc.language.isozh_TWen_US
dc.titleMETAL-GATE/HIGH-k/GE MOSFET WITH LASER ANNEALING AND FABRICATION METHOD THEREOFzh_TW
dc.typePatentsen_US
dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber20130032898zh_TW
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