Title: PHOTO SENSOR AND METHOD OF FABRICATING THE SAME
Authors: Chen Chih
Liu Chien-Min
Tseng Yuan-Chieh
Issue Date: 10-Jan-2013
Abstract: A photo sensor and a method of fabricating the same are disclosed, the photo sensor of the present invention has ultra-high Schottky junction area per unit volume, and the photo sensor comprises: a first conductive layer; plural metallic nanowires, in which one end of each metallic nanowire connects with the first conductive layer and is covered with a semiconductive layer having a width of 1 nm to 20 nm; and a second conductive layer locating opposite to the first conductive layer, whereby the plural metallic nanowires locate between the first conductive layer and the second conductive layer, and the semiconductive layer contacts with the second conductive layer, wherein the photo sensor of the present invention is used to detect ultra violet (UV) light with a wavelength of 10 nm-400 nm.
Gov't Doc #: H01L031/0264
H01L031/18
URI: http://hdl.handle.net/11536/105089
Patent Country: USA
Patent Number: 20130009143
Appears in Collections:Patents


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