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dc.contributor.authorMeng Hsin-Feien_US
dc.contributor.authorZan Hsiao-Wenen_US
dc.contributor.authorHorng Sheng-Fuen_US
dc.contributor.authorChao Yu-Chiangen_US
dc.contributor.authorLin Yuan-Paien_US
dc.date.accessioned2014-12-16T06:15:02Z-
dc.date.available2014-12-16T06:15:02Z-
dc.date.issued2012-12-27en_US
dc.identifier.govdocH01L051/46zh_TW
dc.identifier.govdocH01L031/18zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/105096-
dc.description.abstractA solar cell is provided that an extremely thin light absorber is formed between a n-type semiconductor layer and a p-type semiconductor layer such that the light absorber is used to absorb solar energy, while the p-type semiconductor layer may not absorb light. After separation of electrons and holes, the carriers will not recombine during the conduction, in order to avoid energy loss.zh_TW
dc.language.isozh_TWen_US
dc.titleSOLAR CELL AND FABRICATION METHOD THEREOFzh_TW
dc.typePatentsen_US
dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber20120325318zh_TW
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