High-Gain Complementary Inverter with Ambipolar Thin Film Transistors and Fabrication Thereof

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DC Field	Value	Language
dc.contributor.author	Liu Po-Tsun	en_US
dc.contributor.author	Chou Yi-Teh	en_US
dc.contributor.author	Teng Li-Feng	en_US
dc.contributor.author	Fu Chur-Shyang	en_US
dc.contributor.author	Shieh Han-Ping	en_US
dc.date.accessioned	2014-12-16T06:15:04Z	-
dc.date.available	2014-12-16T06:15:04Z	-
dc.date.issued	2012-11-29	en_US
dc.identifier.govdoc	H01L033/08	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/105113	-
dc.description.abstract	The present invention relates to a high gain complementary inverter with ambipolar thin film transistors and fabrication thereof, comprising: a gate layer, a silica layer, a first active layer, a first source, a first drain, a second active layer, a second source and a second drain for fabrication cost and complexity reduction.	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	High-Gain Complementary Inverter with Ambipolar Thin Film Transistors and Fabrication Thereof	zh_TW
dc.type	Patents	en_US
dc.citation.patentcountry	USA	zh_TW
dc.citation.patentnumber	20120298982	zh_TW
Appears in Collections:	Patents

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