ENHANCEMENT-MODE HIGH-ELECTRON-MOBILITY TRANSISTOR AND THE MANUFACTURING METHOD THEREOF

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	CHANG EDWARD YI	en_US
dc.contributor.author	Chang Chia-Hua	en_US
dc.contributor.author	Lin Yueh-Chin	en_US
dc.date.accessioned	2014-12-16T06:15:05Z	-
dc.date.available	2014-12-16T06:15:05Z	-
dc.date.issued	2012-09-20	en_US
dc.identifier.govdoc	H01L021/335	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/105128	-
dc.description.abstract	This invention discloses an enhancement-mode high-electron-mobility transistor and the manufacturing method thereof. The transistor comprises an epitaxial buffer layer on a substrate, a source and drain formed in the buffer layer, a PN-junction stack formed on the buffer layer and located between the source and drain, and a gate formed on the PN-junction stack, wherein the PN-junction stack is composed of alternating layers of a P-type semiconductor and an N-type semiconductor.	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	ENHANCEMENT-MODE HIGH-ELECTRON-MOBILITY TRANSISTOR AND THE MANUFACTURING METHOD THEREOF	zh_TW
dc.type	Patents	en_US
dc.citation.patentcountry	USA	zh_TW
dc.citation.patentnumber	20120238064	zh_TW
顯示於類別：	專利資料

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