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dc.contributor.authorLee Wei-Ien_US
dc.contributor.authorChen Kuei-Mingen_US
dc.contributor.authorWu Yin-Haoen_US
dc.contributor.authorYeh Yen-Hsienen_US
dc.date.accessioned2014-12-16T06:15:08Z-
dc.date.available2014-12-16T06:15:08Z-
dc.date.issued2012-07-19en_US
dc.identifier.govdocH01L021/306zh_TW
dc.identifier.govdocH01L021/311zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/105148-
dc.description.abstractThe invention discloses a smoothing method to decrease bowing of group III nitride semiconductor substrate. The certain face of group III nitride semiconductor substrates is etched under the appropriate etching recipe and time, the certain morphology such as rod-type and other structures are appeared at the certain face. And such structures releases the compressive stresses at these certain faces, resulting in clearly increasing the bowing radius of the group III nitride semiconductor substrates, finally decreasing the bowing phenomenon of the group III nitride semiconductor substrate.zh_TW
dc.language.isozh_TWen_US
dc.titleMethod for smoothing group lll nitride semiconductor substratezh_TW
dc.typePatentsen_US
dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber20120184102zh_TW
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