DEVICE HAVING SERIES-CONNECTED HIGH ELECTRON MOBILITY TRANSISTORS AND MANUFACTURING METHOD THEREOF

Full metadata record

DC Field	Value	Language
dc.contributor.author	CHANG EDWARD YI	en_US
dc.contributor.author	HSU HENG-TUNG	en_US
dc.date.accessioned	2014-12-16T06:15:14Z	-
dc.date.available	2014-12-16T06:15:14Z	-
dc.date.issued	2012-04-26	en_US
dc.identifier.govdoc	H01L029/778	zh_TW
dc.identifier.govdoc	H01L021/335	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/105192	-
dc.description.abstract	A manufacturing method of a device having series-connected HEMTs is presented. Transistors are formed on a substrate and integratedly serial-connected as an integrated device by interconnection wires. Therefore, the voltage of the device is the sum of the voltages across each transistors so that the device can have high breakdown voltage.	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	DEVICE HAVING SERIES-CONNECTED HIGH ELECTRON MOBILITY TRANSISTORS AND MANUFACTURING METHOD THEREOF	zh_TW
dc.type	Patents	en_US
dc.citation.patentcountry	USA	zh_TW
dc.citation.patentnumber	20120098037	zh_TW
Appears in Collections:	Patents

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