標題: | ENHANCEMENT-MODE HIGH-ELECTRON-MOBILITY TRANSISTOR AND THE MANUFACTURING METHOD THEREOF |
作者: | CHANG EDWARD YI Chang Chia-Hua Lin Yueh-Chin |
公開日期: | 20-九月-2012 |
摘要: | This invention discloses an enhancement-mode high-electron-mobility transistor and the manufacturing method thereof. The transistor comprises an epitaxial buffer layer on a substrate, a source and drain formed in the buffer layer, a PN-junction stack formed on the buffer layer and located between the source and drain, and a gate formed on the PN-junction stack, wherein the PN-junction stack is composed of alternating layers of a P-type semiconductor and an N-type semiconductor. |
官方說明文件#: | H01L021/335 |
URI: | http://hdl.handle.net/11536/105128 |
專利國: | USA |
專利號碼: | 20120238064 |
顯示於類別: | 專利資料 |