標題: Dielectric structure, transistor and manufacturing method thereof
作者: Chang Edward-Yi
Lin Yueh-Chin
公開日期: 5-四月-2012
摘要: The present invention discloses a dielectric structure, a transistor and a manufacturing method thereof with praseodymium oxide. The transistor with praseodymium oxide comprises at least a III-V substrate, a gate dielectric layer and a gate. The gate dielectric layer is disposed on the III-V substrate, and the gate is disposed on the gate dielectric layer, and the gate dielectric layer is praseodymium oxide (PrxOy), which has a high dielectric constant and a high band gap. By using the praseodymium oxide (Pr6O11) as the material of the gate dielectric layer in the present invention, the leakage current could be inhibited, and the equivalent oxide thickness (EOT) of the device with the III-V substrate could be further lowered.
官方說明文件#: H01L029/78
B32B015/04
B05D001/36
H01L021/336
URI: http://hdl.handle.net/11536/105199
專利國: USA
專利號碼: 20120080760
顯示於類別:專利資料


文件中的檔案:

  1. 20120080760.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。