標題: | Dielectric structure, transistor and manufacturing method thereof |
作者: | Chang Edward-Yi Lin Yueh-Chin |
公開日期: | 5-四月-2012 |
摘要: | The present invention discloses a dielectric structure, a transistor and a manufacturing method thereof with praseodymium oxide. The transistor with praseodymium oxide comprises at least a III-V substrate, a gate dielectric layer and a gate. The gate dielectric layer is disposed on the III-V substrate, and the gate is disposed on the gate dielectric layer, and the gate dielectric layer is praseodymium oxide (PrxOy), which has a high dielectric constant and a high band gap. By using the praseodymium oxide (Pr6O11) as the material of the gate dielectric layer in the present invention, the leakage current could be inhibited, and the equivalent oxide thickness (EOT) of the device with the III-V substrate could be further lowered. |
官方說明文件#: | H01L029/78 B32B015/04 B05D001/36 H01L021/336 |
URI: | http://hdl.handle.net/11536/105199 |
專利國: | USA |
專利號碼: | 20120080760 |
顯示於類別: | 專利資料 |