完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chuang Ching-Te | en_US |
dc.contributor.author | Hsieh Chien-Yu | en_US |
dc.contributor.author | Fan Ming-Long | en_US |
dc.contributor.author | Hu Pi-Ho | en_US |
dc.contributor.author | Su Pin | en_US |
dc.date.accessioned | 2014-12-16T06:15:18Z | - |
dc.date.available | 2014-12-16T06:15:18Z | - |
dc.date.issued | 2012-01-19 | en_US |
dc.identifier.govdoc | G11C011/00 | zh_TW |
dc.identifier.uri | http://hdl.handle.net/11536/105224 | - |
dc.description.abstract | The present invention provides a Schmitt trigger-based FinFET static random access memory (SRAM) cell, which is an 8-FinFET structure. A FinFET has the functions of two independent gates. The new SRAM cell uses only 8 FinFET per cell, compared with the 10-FinFET structure in previous works. As a result, the cell structure of the present invention can save chip area and raise chip density. Furthermore, this new SRAM cell can effectively solve the conventional problem that the 6T SRAM cell is likely to have read errors at a low operating voltage. | zh_TW |
dc.language.iso | zh_TW | en_US |
dc.title | SCHMITT TRIGGER-BASED FINFET SRAM CELL | zh_TW |
dc.type | Patents | en_US |
dc.citation.patentcountry | USA | zh_TW |
dc.citation.patentnumber | 20120014171 | zh_TW |
顯示於類別: | 專利資料 |