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dc.contributor.authorKuo, Yan-Fuen_US
dc.contributor.authorTai, Ya-Hsiangen_US
dc.date.accessioned2014-12-08T15:13:37Z-
dc.date.available2014-12-08T15:13:37Z-
dc.date.issued2007-08-01en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.sse.2007.05.015en_US
dc.identifier.urihttp://hdl.handle.net/11536/10525-
dc.description.abstractIn recent years, low temperature polycrystalline silicon (LTPS) thin-film transistor (TFT) has been widely investigated for various applications to system-on-panel (SOP) technology. However, due to the complexity of grain boundary trap properties, the conducting behaviors of various LTPS TFTs are difficult to be analyzed systematically. In this paper, the common and device-dependent thermal effects are studied to understand the conduction mechanism in the UPS TFTs. (c) 2007 Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectUPS TFTen_US
dc.subjecttemperature dependenceen_US
dc.subjectvariationen_US
dc.subjectscattering mechanismen_US
dc.titleStatistical study on the temperature dependence of the turn-on characteristics for p-type LTPS TFTsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.sse.2007.05.015en_US
dc.identifier.journalSOLID-STATE ELECTRONICSen_US
dc.citation.volume51en_US
dc.citation.issue8en_US
dc.citation.spage1092en_US
dc.citation.epage1095en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000249621000002-
dc.citation.woscount1-
Appears in Collections:Articles


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