Statistical study on the temperature dependence of the turn-on characteristics for p-type LTPS TFTs

doi:10.1016/j.sse.2007.05.015

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DC 欄位	值	語言
dc.contributor.author	Kuo, Yan-Fu	en_US
dc.contributor.author	Tai, Ya-Hsiang	en_US
dc.date.accessioned	2014-12-08T15:13:37Z	-
dc.date.available	2014-12-08T15:13:37Z	-
dc.date.issued	2007-08-01	en_US
dc.identifier.issn	0038-1101	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/j.sse.2007.05.015	en_US
dc.identifier.uri	http://hdl.handle.net/11536/10525	-
dc.description.abstract	In recent years, low temperature polycrystalline silicon (LTPS) thin-film transistor (TFT) has been widely investigated for various applications to system-on-panel (SOP) technology. However, due to the complexity of grain boundary trap properties, the conducting behaviors of various LTPS TFTs are difficult to be analyzed systematically. In this paper, the common and device-dependent thermal effects are studied to understand the conduction mechanism in the UPS TFTs. (c) 2007 Elsevier Ltd. All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.subject	UPS TFT	en_US
dc.subject	temperature dependence	en_US
dc.subject	variation	en_US
dc.subject	scattering mechanism	en_US
dc.title	Statistical study on the temperature dependence of the turn-on characteristics for p-type LTPS TFTs	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1016/j.sse.2007.05.015	en_US
dc.identifier.journal	SOLID-STATE ELECTRONICS	en_US
dc.citation.volume	51	en_US
dc.citation.issue	8	en_US
dc.citation.spage	1092	en_US
dc.citation.epage	1095	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	顯示科技研究所	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.contributor.department	Institute of Display	en_US
dc.identifier.wosnumber	WOS:000249621000002	-
dc.citation.woscount	1	-
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