OHMIC CONTACT OF III-V SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

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DC 欄位	值	語言
dc.contributor.author	CHANG, Edward Yi	en_US
dc.contributor.author	KUO, Chien-I	en_US
dc.contributor.author	CHANG, Chun-Yen	en_US
dc.date.accessioned	2014-12-16T06:15:25Z	-
dc.date.available	2014-12-16T06:15:25Z	-
dc.date.issued	2011-04-21	en_US
dc.identifier.govdoc	H01L029/778	zh_TW
dc.identifier.govdoc	H01L021/335	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/105312	-
dc.description.abstract	Heavily doped epitaxial SiGe material or epitaxial InxGa1-xAs are used to form the source and drain of III-V semiconductor device to apply stress to the channel of III-V semiconductor device. Therefore, the electron mobility can be increased.	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	OHMIC CONTACT OF III-V SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME	zh_TW
dc.type	Patents	en_US
dc.citation.patentcountry	USA	zh_TW
dc.citation.patentnumber	20110089467	zh_TW
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