Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 李威儀 | en_US |
| dc.contributor.author | 徐瑩珈 | en_US |
| dc.contributor.author | 葉彥顯 | en_US |
| dc.contributor.author | 陳奎銘 | en_US |
| dc.date.accessioned | 2014-12-16T06:15:26Z | - |
| dc.date.available | 2014-12-16T06:15:26Z | - |
| dc.date.issued | 2013-09-01 | en_US |
| dc.identifier.govdoc | H01L021/3065 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/105319 | - |
| dc.description.abstract | 本發明揭露一種氮化物半導體磊晶層的表面處理方法，在特定溫度和壓力的環境中，於氮化物半導體磊晶層上通入特定的蝕刻氣體，經過特定的時間，可於氮化物半導體磊晶層表面產生特定的形貌。本發明可直接在氮化物半導體之表面產生圖樣化結構，可大幅降低製造成本。 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 一種氮化物半導體磊晶層的表面處理方法 | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | TWN | zh_TW |
| dc.citation.patentnumber | I407506 | zh_TW |
| Appears in Collections: | Patents | |
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