Method for growing non-polar m-plane epitaxial layer of wurtzite semiconductors on single crystal oxide substrates

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DC 欄位	值	語言
dc.contributor.author	Chang, Li	en_US
dc.contributor.author	Ho, Yen-Teng	en_US
dc.date.accessioned	2014-12-16T06:15:26Z	-
dc.date.available	2014-12-16T06:15:26Z	-
dc.date.issued	2011-03-17	en_US
dc.identifier.govdoc	H01L029/22	zh_TW
dc.identifier.govdoc	H01L021/34	zh_TW
dc.identifier.govdoc	H01L021/20	zh_TW
dc.identifier.govdoc	H01L029/20	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/105323	-
dc.description.abstract	The present invention relates to a method for growing a non-polar m-plane epitaxial layer on a single crystal oxide substrate, which comprises the following steps: providing a single crystal oxide with a perovskite structure; using a plane of the single crystal oxide as a substrate; and forming an m-plane epitaxial layer of wurtzite semiconductors on the plane of the single crystal oxide by a vapor deposition process. The present invention also provides an epitaxial layer having an m-plane obtained according to the aforementioned method.	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	Method for growing non-polar m-plane epitaxial layer of wurtzite semiconductors on single crystal oxide substrates	zh_TW
dc.type	Patents	en_US
dc.citation.patentcountry	USA	zh_TW
dc.citation.patentnumber	20110062437	zh_TW
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