標題: | The growth of heteroepitaxial CuInSe2 on free-standing N-polar GaN |
作者: | Shih, Cheng-Hung Lo, Ikai You, Shuo-Ting Tsai, Cheng-Da Tseng, Bae-Heng Chen, Yun-Feng Chen, Chiao-Hsin Lee, Chuo-Han Lee, Wei-I Hsu, Gary Z. L. 電子物理學系 Department of Electrophysics |
公開日期: | 1-十二月-2014 |
摘要: | We report that chalcopyrite CuInSe2 thin films were grown on free-standing N-polar GaN (000 (1) over bar) by molecular beam epitaxy. X-ray diffraction showed that the CuInSe2 thin film was grown in (112) orientation, and its peak of rocking curve with full width at half maximum of about 897.8 arc-sec indicated the epitaxial growth of CuInSe2 (112) film on N-polar GaN. Microstructure analysis of the CuInSe2 showed that the large lattice mismatch (28.5%) between CuInSe2 and GaN is accommodated by domain matching, and no interface reaction occurs between CuInSe2 and GaN. Our experimental results show that GaN is stable for the epitaxial growth of CuInSe2 thin film, which exhibits a promising potential for optoelectronic applications. (C) 2014 Author(s). |
URI: | http://dx.doi.org/10.1063/1.4904030 http://hdl.handle.net/11536/124083 |
ISSN: | 2158-3226 |
DOI: | 10.1063/1.4904030 |
期刊: | AIP ADVANCES |
Issue: | 12 |
顯示於類別: | 期刊論文 |