完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Sheu, Jeng-Tzong | en_US |
dc.contributor.author | Chen, Chen-Chia | en_US |
dc.date.accessioned | 2014-12-16T06:15:29Z | - |
dc.date.available | 2014-12-16T06:15:29Z | - |
dc.date.issued | 2010-12-23 | en_US |
dc.identifier.govdoc | G01R027/08 | zh_TW |
dc.identifier.govdoc | H01L029/772 | zh_TW |
dc.identifier.govdoc | H01L021/02 | zh_TW |
dc.identifier.govdoc | G01R019/00 | zh_TW |
dc.identifier.uri | http://hdl.handle.net/11536/105349 | - |
dc.description.abstract | The invention disclosed a sensing element integrating silicon nanowire gated-diodes with microfluidic channel, a manufacturing method and a detecting system thereof. The sensing element integrating silicon nanowire gated-diodes with a microfluidic channel comprises a silicon nanowire gated-diode, a plurality of reference electrodes, a passivation layer and a microfluidic channel. The reference electrodes are formed on the silicon nanowire gated-diodes, and the passivation layer having a surface decorated with chemical materials is used for covering the silicon nanowire gated-diodes, and the microfluidic channel is connected with the passivation layer. When a detecting sample is connected or absorbed on the surface of the passivation layer, the sensing element integrating silicon nanowire gated-diodes with the microfluidic channel can detect an electrical signal change. | zh_TW |
dc.language.iso | zh_TW | en_US |
dc.title | Sensing element integrating silicon nanowire gated-diodes, manufacturing method and detecting system thereof | zh_TW |
dc.type | Patents | en_US |
dc.citation.patentcountry | USA | zh_TW |
dc.citation.patentnumber | 20100321044 | zh_TW |
顯示於類別: | 專利資料 |