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dc.contributor.authorWEI, Kung-Hwaen_US
dc.contributor.authorSHEU, Jeng-Tzongen_US
dc.contributor.authorCHEN, Chen-Chiaen_US
dc.contributor.authorCHIU, Mao-Yuanen_US
dc.date.accessioned2014-12-16T06:15:41Z-
dc.date.available2014-12-16T06:15:41Z-
dc.date.issued2010-03-04en_US
dc.identifier.govdocG01R031/265zh_TW
dc.identifier.govdocH01L031/0352zh_TW
dc.identifier.govdocH01L031/0256zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/105438-
dc.description.abstractThe present invention provides an optoelectronic memory device, the method for manufacturing and evaluating the same. The optoelectronic memory device according to the present invention includes a substrate, an insulation layer, an active layer, source electrode and drain electrode. The substrate includes a gate, and the insulation layer is formed on the substrate. The active layer is formed on the insulation layer, and more particularly, the active layer is formed of a composite material comprising conjugated conductive polymers and quantum dots. Moreover, both of the source and the drain are formed on the insulation layer, and electrically connected to the active layer.zh_TW
dc.language.isozh_TWen_US
dc.titleOPTOELECTRONIC MEMORY DEVICE AND METHOD FOR MANUFACTURING AND MEASURING THE SAMEzh_TW
dc.typePatentsen_US
dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber20100052654zh_TW
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