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dc.contributor.authorChang, Chia-Huaen_US
dc.contributor.authorYang, Chin-Shengen_US
dc.contributor.authorChiu, Ching-Huaen_US
dc.contributor.authorYu, Pei-Chenen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.date.accessioned2014-12-16T06:15:42Z-
dc.date.available2014-12-16T06:15:42Z-
dc.date.issued2010-02-18en_US
dc.identifier.govdocB32B003/26zh_TW
dc.identifier.govdocC23C014/30zh_TW
dc.identifier.govdocC23C014/34zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/105443-
dc.description.abstractThe present invention discloses a transparent conductive nanostructured thin-film by oblique-angle deposition and method of the same. An electron beam system is utilized to evaporate the target source. Evaporation substrate is disposed on a plurality of adjustable sample stage. Multiple gas control valve and heat source is provided to control the gas flow and temperature within the process chamber. An annealing process is performed after the evaporation to improve the thin-film structure and optoelectronic properties.zh_TW
dc.language.isozh_TWen_US
dc.titleNanostructured thin-film formed by utilizing oblique-angle deposition and method of the samezh_TW
dc.typePatentsen_US
dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber20100040859zh_TW
Appears in Collections:Patents


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