標題: | Slanted n-ZnO nanorod arrays/p-GaN light-emitting diodes with strong ultraviolet emissions |
作者: | Yang, Zu-Po Xie, Zhong-Han Lin, Chia-Ching Lee, Ya-Ju 光電系統研究所 Institute of Photonic System |
公開日期: | 1-二月-2015 |
摘要: | Both of oblique angle deposition and conventional deposition techniques were used by a RF sputtering system to grow the slanted (beta = 32 degrees) and planar (beta = 0 degrees) n-ZnO films on p-GaN, respectively. These two kinds of n-ZnO/p-GaN heterojunctions were then fabricated the light-emitting diodes (LEDs). The electrical and optical properties of these two kinds of LEDs were investigated systematically. The results show that the slanted n-ZnO/p-GaN LEDs have a lower turn-on voltage and less leakage current than that of planar n-ZnO/p-GaN LEDs. Moreover, different from the planar n-ZnO/p-GaN LEDs which emitting colors changes with injection current, the slanted n-ZnO/p-GaN LEDs retains UV emissions (385-400 nm) under the entire range of injection currents we applied. The dominant UV luminescence of slanted n-ZnO/p-GaN LEDs is attributed to the ZnO near band edge transitions, indicating the high quality of slanted ZnO films and exhibiting the essential property dedicated to nano-sized heterojunctions. Hence, we have demonstrated that the slanted n-ZnO/p-GaN LEDs fabricated by oblique angle deposition have better performance than the planar n-ZnO/p-GaN LEDs fabricated by convention deposition means. (C) 2015 Optical Society of America |
URI: | http://dx.doi.org/10.1364/OME.5.000399 http://hdl.handle.net/11536/124576 |
ISSN: | 2159-3930 |
DOI: | 10.1364/OME.5.000399 |
期刊: | OPTICAL MATERIALS EXPRESS |
Volume: | 5 |
Issue: | 2 |
起始頁: | 399 |
結束頁: | 407 |
顯示於類別: | 期刊論文 |