Light emitting device and fabrication method therefor

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DC 欄位	值	語言
dc.contributor.author	Chang, Chun-Yen	en_US
dc.contributor.author	Yang, Tsung Hsi	en_US
dc.date.accessioned	2014-12-16T06:15:44Z	-
dc.date.available	2014-12-16T06:15:44Z	-
dc.date.issued	2009-11-12	en_US
dc.identifier.govdoc	H01L033/00	zh_TW
dc.identifier.govdoc	H01L021/00	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/105469	-
dc.description.abstract	A light emitting device (LED) structure formed on a Group IV-based semiconductor substrate is provided. The LED structure includes a Group IV-based substrate, an AlN nucleation layer formed on the Group IV-based substrate, a GaN epitaxial layer formed on the AlN nucleation layer, a distributed Bragg reflector (DBR) multi-layer structure formed on the epitaxial layer, and an LED active layer formed on the DBR multi-layer structure.	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	Light emitting device and fabrication method therefor	zh_TW
dc.type	Patents	en_US
dc.citation.patentcountry	USA	zh_TW
dc.citation.patentnumber	20090278165	zh_TW
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