MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

Abstract

The invention discloses a memory device and method thereof. The memory device comprises a substrate, an insulator layer, a first conducting layer, a CaCu3Ti4O12 resistor layer and a second conducting layer. The insulator layer is formed over the substrate. The first conducting layer is formed over the insulator layer. The CaCu3Ti4O12 resistor layer is formed over the first conducting layer. The second conducting layer is formed over the CaCu3Ti4O12 resistor layer. In manufacturing, firstly, a substrate is provided. Then, a resistor layer is formed on the substrate. Next, a first conducting layer is formed on the resistor layer. Afterward, a CaCu3Ti4O12 resistor layer is formed on the first conducting layer by utilizing sol-gel method. Finally, a second conducting layer is formed on the CaCu3Ti4O12 resistor layer. The invention not only satisfies a requirement of low driving voltage in electronic product but also increases reliability and compatibility even cost is diminished.