标题: Resistive random access memory (RRAM) using stacked dielectrics and method for manufacturing the same
作者: Chin Albert
Cheng Chun-Hu
公开日期: 29-七月-2014
摘要: Resistive random access memory (RRAM) using stacked dielectrics and a method for manufacturing the same are disclosed, where a setting power of only 4 μW, an ultra-low reset power of 2 nW, good switching uniformity and excellent cycling endurance up to 5×109 cycles were achieved simultaneously. Such record high performances were reached in a Ni/GeOx/nano-crystal-TiO2/TaON/TaN RRAM device, where the excellent endurance is 4˜6 orders of magnitude larger than existing Flash memory. The very long endurance and low switching energy RRAM is not only satisfactory for portable SSD in a computer, but may also create new applications such as being used for a Data Center to replace high power consumption hard discs.
官方说明文件#: H01L047/00
URI: http://hdl.handle.net/11536/104359
专利国: USA
专利号码: 08791444
显示于类别:Patents


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