標題: Ultralow Switching Energy Ni/GeOx/HfON/TaN RRAM
作者: Cheng, C. H.
Chin, Albert
Yeh, F. S.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: GeO2;HfON;hopping conduction;resistive random access memory (RRAM)
公開日期: 1-三月-2011
摘要: Using stacked covalent-bond-dielectric GeOx on metal-oxynitrideHfON, the Ni/GeOx/HfON/TaN resistive random access memory (RRAM) showed ultralow set power of 0.3 mu W (0.1 mu A at 3 V), reset power of 0.6 nW (-0.3 nA at -1.8 V), fast 20-ns switching time, ultralow 8-fJ switching energy (4-V overstress), and excellent 10(6) cycling endurance. Such excellent performance was reached by using hopping conduction with negative temperature coefficient (TC) rather than the positive TC in metal-oxide RRAM.
URI: http://dx.doi.org/10.1109/LED.2010.2095820
http://hdl.handle.net/11536/150252
ISSN: 0741-3106
DOI: 10.1109/LED.2010.2095820
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 32
起始頁: 366
結束頁: 368
顯示於類別:期刊論文