Bipolar switching characteristics of low-power Geo resistive memory

標題:	Bipolar switching characteristics of low-power Geo resistive memory
作者:	Cheng, C. H. Chen, P. C. Liu, S. L. Wu, T. L. Hsu, H. H. Chin, Albert Yeh, F. S. 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
關鍵字:	Resistive random access memory (RRAM);Germanium oxide (GeO(2))
公開日期:	1-八月-2011
摘要:	We reported an ultra low-power resistive random access memory (RRAM) combining a low-cost Ni electrode and covalent-bond GeO(x) dielectric. This cost-effective Ni/GeO(x)/TaN RRAM device has very small set power of 2 mu W, ultra-low reset power of 130 pW, greater than 1 order of magnitude resistance window, and stable retention at 85 degrees C. The current flow at low-resistance state is governed by Poole-Frenkel conduction with electrons hopping via defect traps, which is quite different from the filament conduction in metal-oxide RRAM. (C) 2011 Elsevier Ltd. All rights reserved.
URI:	http://dx.doi.org/10.1016/j.sse.2011.04.010 http://hdl.handle.net/11536/21216
ISSN:	0038-1101
DOI:	10.1016/j.sse.2011.04.010
期刊:	SOLID-STATE ELECTRONICS
Volume:	62
Issue:	1
起始頁:	90
結束頁:	93
顯示於類別：	期刊論文

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