Bipolar switching characteristics of low-power Geo resistive memory

doi:10.1016/j.sse.2011.04.010

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Cheng, C. H.	en_US
dc.contributor.author	Chen, P. C.	en_US
dc.contributor.author	Liu, S. L.	en_US
dc.contributor.author	Wu, T. L.	en_US
dc.contributor.author	Hsu, H. H.	en_US
dc.contributor.author	Chin, Albert	en_US
dc.contributor.author	Yeh, F. S.	en_US
dc.date.accessioned	2014-12-08T15:29:30Z	-
dc.date.available	2014-12-08T15:29:30Z	-
dc.date.issued	2011-08-01	en_US
dc.identifier.issn	0038-1101	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/j.sse.2011.04.010	en_US
dc.identifier.uri	http://hdl.handle.net/11536/21216	-
dc.description.abstract	We reported an ultra low-power resistive random access memory (RRAM) combining a low-cost Ni electrode and covalent-bond GeO(x) dielectric. This cost-effective Ni/GeO(x)/TaN RRAM device has very small set power of 2 mu W, ultra-low reset power of 130 pW, greater than 1 order of magnitude resistance window, and stable retention at 85 degrees C. The current flow at low-resistance state is governed by Poole-Frenkel conduction with electrons hopping via defect traps, which is quite different from the filament conduction in metal-oxide RRAM. (C) 2011 Elsevier Ltd. All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.subject	Resistive random access memory (RRAM)	en_US
dc.subject	Germanium oxide (GeO(2))	en_US
dc.title	Bipolar switching characteristics of low-power Geo resistive memory	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1016/j.sse.2011.04.010	en_US
dc.identifier.journal	SOLID-STATE ELECTRONICS	en_US
dc.citation.volume	62	en_US
dc.citation.issue	1	en_US
dc.citation.spage	90	en_US
dc.citation.epage	93	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000292444000015	-
dc.citation.woscount	1	-
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