Ultralow Switching Energy Ni/GeOx/HfON/TaN RRAM

doi:10.1109/LED.2010.2095820

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Cheng, C. H.	en_US
dc.contributor.author	Chin, Albert	en_US
dc.contributor.author	Yeh, F. S.	en_US
dc.date.accessioned	2019-04-02T05:59:52Z	-
dc.date.available	2019-04-02T05:59:52Z	-
dc.date.issued	2011-03-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LED.2010.2095820	en_US
dc.identifier.uri	http://hdl.handle.net/11536/150252	-
dc.description.abstract	Using stacked covalent-bond-dielectric GeOx on metal-oxynitrideHfON, the Ni/GeOx/HfON/TaN resistive random access memory (RRAM) showed ultralow set power of 0.3 mu W (0.1 mu A at 3 V), reset power of 0.6 nW (-0.3 nA at -1.8 V), fast 20-ns switching time, ultralow 8-fJ switching energy (4-V overstress), and excellent 10(6) cycling endurance. Such excellent performance was reached by using hopping conduction with negative temperature coefficient (TC) rather than the positive TC in metal-oxide RRAM.	en_US
dc.language.iso	en_US	en_US
dc.subject	GeO2	en_US
dc.subject	HfON	en_US
dc.subject	hopping conduction	en_US
dc.subject	resistive random access memory (RRAM)	en_US
dc.title	Ultralow Switching Energy Ni/GeOx/HfON/TaN RRAM	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/LED.2010.2095820	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	32	en_US
dc.citation.spage	366	en_US
dc.citation.epage	368	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000287658400048	en_US
dc.citation.woscount	29	en_US
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