Lasing characteristics of a GaN photonic crystal nanocavity light source

Abstract

Lasing characteristics from photonic crystal defects fabricated on bulk GaN are investigated. The device demonstrates multimode lasing with linewidths as narrow as 2-3 angstrom, and an enhanced spontaneous emission factor beta similar to 0.045. The emission spectra indicate that the laser emission is initiated horizontally in the defect nanocavity and then coupled to the vertical radiation, possibly via photonic crystal Bloch modes or by scattering.