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dc.contributor.authorCHANG, Edward Yien_US
dc.contributor.authorChen, Ke-Shianen_US
dc.date.accessioned2014-12-16T06:15:47Z-
dc.date.available2014-12-16T06:15:47Z-
dc.date.issued2009-08-06en_US
dc.identifier.govdocH01L029/732zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/105504-
dc.description.abstractThe present invention discloses a fully Cu-metallized III-V group compound semiconductor device, wherein the fully Cu-metallized of a III-V group compound semiconductor device is realized via using an N-type gallium arsenide ohmic contact metal layer formed of a palladium/germanium/copper composite metal layer, a P-type gallium arsenide ohmic contact metal layer formed of a platinum/titanium/platinum/copper composite metal layer, and interconnect metals formed of a titanium/platinum/copper composite metal layer. Thereby, the fabrication cost of III-V group compound semiconductor devices can be greatly reduced, and the performance of III-V group compound semiconductor devices can be greatly promoted. Besides, the heat-dissipation effect can also be increased, and the electric impedance can also be reduced.zh_TW
dc.language.isozh_TWen_US
dc.titleFully Cu-metallized III-V group compound semiconductor device with palladium/germanium/copper ohmic contact systemzh_TW
dc.typePatentsen_US
dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber20090194846zh_TW
Appears in Collections:Patents


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