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dc.contributor.authorKer, Ming-Douen_US
dc.contributor.authorChen, Wen-Yien_US
dc.date.accessioned2014-12-16T06:16:03Z-
dc.date.available2014-12-16T06:16:03Z-
dc.date.issued2007-10-04en_US
dc.identifier.govdocH02H009/00zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/105633-
dc.description.abstractA high-voltage tolerant power-rail ESD clamp circuit is proposed, in which circuit devices can safely operate under the high power supply voltage that is three times larger than their process limitation without gate-oxide reliability issue. Moreover, an ESD detection circuit is used to effectively improve the whole ESD protection function by substrate-triggered technique. Because only low voltage (1*VDD) devices are used to achieve the object of high voltage (3*VDD) tolerance, the proposed design provides a cost effective power-rail ESD protection solution to chips with mixed-voltage interfaces.zh_TW
dc.language.isozh_TWen_US
dc.titleHIGH-VOLTAGE TOLERANT POWER-RAIL ESD CLAMP CIRCUITzh_TW
dc.typePatentsen_US
dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber20070230073zh_TW
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