完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Ker, Ming-Dou | en_US |
dc.contributor.author | Chen, Wen-Yi | en_US |
dc.date.accessioned | 2014-12-16T06:16:03Z | - |
dc.date.available | 2014-12-16T06:16:03Z | - |
dc.date.issued | 2007-10-04 | en_US |
dc.identifier.govdoc | H02H009/00 | zh_TW |
dc.identifier.uri | http://hdl.handle.net/11536/105633 | - |
dc.description.abstract | A high-voltage tolerant power-rail ESD clamp circuit is proposed, in which circuit devices can safely operate under the high power supply voltage that is three times larger than their process limitation without gate-oxide reliability issue. Moreover, an ESD detection circuit is used to effectively improve the whole ESD protection function by substrate-triggered technique. Because only low voltage (1*VDD) devices are used to achieve the object of high voltage (3*VDD) tolerance, the proposed design provides a cost effective power-rail ESD protection solution to chips with mixed-voltage interfaces. | zh_TW |
dc.language.iso | zh_TW | en_US |
dc.title | HIGH-VOLTAGE TOLERANT POWER-RAIL ESD CLAMP CIRCUIT | zh_TW |
dc.type | Patents | en_US |
dc.citation.patentcountry | USA | zh_TW |
dc.citation.patentnumber | 20070230073 | zh_TW |
顯示於類別: | 專利資料 |