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dc.contributor.authorFu, Chang-Tsungen_US
dc.contributor.authorKuo, Chien-Nanen_US
dc.date.accessioned2014-12-16T06:16:05Z-
dc.date.available2014-12-16T06:16:05Z-
dc.date.issued2007-08-02en_US
dc.identifier.govdocH03F001/34zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/105643-
dc.description.abstractThis invention relates to a low noise amplifier, used in radio frequency integrated circuit design, especially low noise amplifiers for ultra broad-band wireless communication, comprising at least a transistor of the core circuit of a low noise amplifier structure, a transformer that is implemented on the chip, in order to form a dual feedback amplifier, that is, an amplifier structure comprising an inductive feedback and a capacitive feedback, wherein the capacitive feedback is used for the low and medium frequency range, while the inductive feedback is used for the high frequency range. By assembling an amplifier circuit with these two feedback paths, it is possible to provide a broadband and good impedance matching at the signal input end of the circuit. The low noise amplifier circuit structure of the present invention is able to provide optimal conditions for broadband input impedance matching and broadband noise optimum; besides significantly increasing the gain and gain flatness, there are also huge improvements to the noise performance and the cost-down on fabrication, and the energy consumption can also be maintained at a very low level.zh_TW
dc.language.isozh_TWen_US
dc.titleUltra broad-band low noise amplifier utilizing dual feedback techniquezh_TW
dc.typePatentsen_US
dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber20070176686zh_TW
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