完整后设资料纪录
DC 栏位 | 值 | 语言 |
---|---|---|
dc.contributor.author | Lee, Tseng-Chin | en_US |
dc.contributor.author | Tsui, Bing-Yue | en_US |
dc.contributor.author | Tzeng, Pei-Jer | en_US |
dc.contributor.author | Wang, Ching-Chiun | en_US |
dc.contributor.author | Tsai, Ming-Jinn | en_US |
dc.date.accessioned | 2014-12-08T15:13:40Z | - |
dc.date.available | 2014-12-08T15:13:40Z | - |
dc.date.issued | 2010-05-01 | en_US |
dc.identifier.issn | 0026-2714 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/j.microrel.2010.01.008 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/10566 | - |
dc.description.abstract | Carbon nanotube field effect transistors (CNTFETs) have been considered as one of the potential candidates for nanoelectronics beyond Si CMOS. However, it is not easy to have high performance CNTFETs with high yield currently. In this work, we proposed a local bottom-gate (LBG) CNTFETs combined with a novel device concept and optimized process technologies. High performance of CNTFET with low subthreshold swing of 139 mV/dec, high transconductance of 1.27 mu S, and high I(on)/I(off) ratio of 10(6) can be easily obtained with Ti source/drain contact after a post annealing process. Record high yield of 74% has been demonstrated. On the basis of the proposed process, lots of high performance CNTFETs can be obtained easily for advanced study on the electrical characteristics of CNTFETs in the future. (C) 2010 Elsevier Ltd. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.title | A process for high yield and high performance carbon nanotube field effect transistors | en_US |
dc.type | Article; Proceedings Paper | en_US |
dc.identifier.doi | 10.1016/j.microrel.2010.01.008 | en_US |
dc.identifier.journal | MICROELECTRONICS RELIABILITY | en_US |
dc.citation.volume | 50 | en_US |
dc.citation.issue | 5 | en_US |
dc.citation.spage | 666 | en_US |
dc.citation.epage | 669 | en_US |
dc.contributor.department | 电子工程学系及电子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000278728700021 | - |
显示于类别: | Conferences Paper |
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