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DC FieldValueLanguage
dc.contributor.authorChang, Edward Yien_US
dc.contributor.authorChang, Shang-Wenen_US
dc.contributor.authorLee, Cheng-Shihen_US
dc.date.accessioned2014-12-16T06:16:10Z-
dc.date.available2014-12-16T06:16:10Z-
dc.date.issued2006-12-28en_US
dc.identifier.govdocH01L021/8238zh_TW
dc.identifier.govdocH01L027/082zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/105677-
dc.description.abstractThe present invention is a compound semiconductor device characterized in that it is Cu-metalized to improved the reliability of the device and to greatly reduce the cost of production.zh_TW
dc.language.isozh_TWen_US
dc.titleCu-metalized compound semiconductor devicezh_TW
dc.typePatentsen_US
dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber20060292785zh_TW
Appears in Collections:Patents


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