標題: Low-temperature method for enhancing sputter-deposited HfO2 films with complete oxidization
作者: Tsai, Chih-Tsung
Chang, Ting-Chang
Liu, Po-Tsun
Yang, Po-Yu
Kuo, Yu-Chieh
Kin, Kon-Tsu
Chang, Pei-Lin
Huang, Fon-Shan
光電工程學系
顯示科技研究所
Department of Photonics
Institute of Display
公開日期: 2-七月-2007
摘要: A low-temperature method, supercritical CO2 fluid (SCF) technology, is proposed to improve the dielectric properties of ultrathin hafnium oxide (HfO2) film at 150 degrees C without significant formation of parasitic oxide at the interface between HfO2 and Si substrate. In this research, the HfO2 films were deposited by dc sputter at room temperature and post-treated by SCF which is mixed with 5 vol % propyl alcohol and 5 vol % H2O. From high-resolution transmission electron microscopy image, the interfacial oxide of SCF-treated HfO2 film is only 5 angstrom thick. Additionally, the enhancements in the qualities of sputter-deposited HfO2 film after SCF process are exhibited by x-ray photoelectron spectroscopy and capacitance-voltage (C-V) measurement. (c) 2007 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2753762
http://hdl.handle.net/11536/10572
ISSN: 0003-6951
DOI: 10.1063/1.2753762
期刊: APPLIED PHYSICS LETTERS
Volume: 91
Issue: 1
結束頁: 
顯示於類別:期刊論文


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