標題: | Low-temperature method for enhancing sputter-deposited HfO2 films with complete oxidization |
作者: | Tsai, Chih-Tsung Chang, Ting-Chang Liu, Po-Tsun Yang, Po-Yu Kuo, Yu-Chieh Kin, Kon-Tsu Chang, Pei-Lin Huang, Fon-Shan 光電工程學系 顯示科技研究所 Department of Photonics Institute of Display |
公開日期: | 2-七月-2007 |
摘要: | A low-temperature method, supercritical CO2 fluid (SCF) technology, is proposed to improve the dielectric properties of ultrathin hafnium oxide (HfO2) film at 150 degrees C without significant formation of parasitic oxide at the interface between HfO2 and Si substrate. In this research, the HfO2 films were deposited by dc sputter at room temperature and post-treated by SCF which is mixed with 5 vol % propyl alcohol and 5 vol % H2O. From high-resolution transmission electron microscopy image, the interfacial oxide of SCF-treated HfO2 film is only 5 angstrom thick. Additionally, the enhancements in the qualities of sputter-deposited HfO2 film after SCF process are exhibited by x-ray photoelectron spectroscopy and capacitance-voltage (C-V) measurement. (c) 2007 American Institute of Physics. |
URI: | http://dx.doi.org/10.1063/1.2753762 http://hdl.handle.net/11536/10572 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.2753762 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 91 |
Issue: | 1 |
結束頁: | |
顯示於類別: | 期刊論文 |