標題: Method for lifting offGaN pseudomask epitaxy layerusing wafer bonding way
作者: Wu, Yew-Chung
Lin, Pei-Yen
Peng, Hsien-Chih
公開日期: 25-Aug-2005
摘要: Present invention is a method for lifting off GaN pseudomask epitaxy layer using wafer bonding way, wherein GaN epitaxy is obtained by way of selective area growth on a seed and the growth is in a way of pseudomask growth over a substrate. Owing to the different thermal expansion coefficients of the substrate and the GaN seed, by way of annealing and wafer bonding, the GaN epitaxy layer and the epitaxy substrate can be separated, or the GaN epitaxy substrate can be transferred onto another substrate. Thereby, the epitaxy substrate separated is not spoiled during the transferring procedure and can be reused, which lowers the cost; and high-quality GaN epitaxy layer can be transferred to various kinds of substrates for various kinds of usage and for solving the problems of difficulties in the production or the utilization of the substrate (such as difficulties in the cutting, the conductivity, the heat-sinking, and so on.)
官方說明文件#: H01L021/00
URI: http://hdl.handle.net/11536/105734
專利國: USA
專利號碼: 20050186764
Appears in Collections:Patents


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