Method of selective growth of carbon nano-structures on silicon substrates

Abstract

A method of selective growth of carbon nano-structures on silicon substrates, comprising definition of the predetermined area on Si substrates to be grown carbon nano-structures, formation of metal-silicides on the predetermined area on the said Si substrates to be grown carbon nano-structures, and growth of carbon nano-structures on the said metal-silicides by chemical vapor deposition method. Locations of the said metal-silicides on the said Si substrates are growth area of the nano-structures, whereby function of selective growth of carbon nano-structures on Si substrates can be achieved. Besides, the said metal-silicides area is manufactured by semiconductor processes, and is directly compatible with IC processes.