Schottky structure in GaAs semiconductor device

標題:	Schottky structure in GaAs semiconductor device
作者:	Cheng-Shih, Lee Yi, Chang
公開日期:	29-一月-2004
摘要:	The present invention provides a Schottky Structure in gallium arsenide (GaAs) semiconductor device, which comprises a gallium arsenide (GaAs) semiconductor substrate, a titanium (Ti) layer on a surface of said gallium arsenide (GaAs) semiconductor substrate to form Schottky contact, a diffusion barrier layer on a surface of said titanium (Ti) layer to block metal diffusion, and a first copper layer on a surface of said diffusion barrier layer.
官方說明文件#:	H01L027/095
URI:	http://hdl.handle.net/11536/105781
專利國:	USA
專利號碼:	20040016984
顯示於類別：	專利資料

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