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dc.contributor.author黃柏蒼en_US
dc.contributor.author劉文彥en_US
dc.contributor.author黃威en_US
dc.date.accessioned2014-12-16T06:16:46Z-
dc.date.available2014-12-16T06:16:46Z-
dc.date.issued2011-10-01en_US
dc.identifier.govdocG11C007/24zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/106066-
dc.description.abstract一種應用於三元內容可定址記憶體漏電流截斷裝置。三元內容可定址記憶體之儲存記憶胞區分為運轉模式、待機模式及截止模式,本發明利用多模式閘極電源控制裝置降低三元電晶體可定址記憶體之儲存記憶胞在待機模式及截止模式之漏電流並維持運轉模式執行效能。zh_TW
dc.language.isozh_TWen_US
dc.title三元內容可定址記憶體漏電流截斷裝置zh_TW
dc.typePatentsen_US
dc.citation.patentcountryTWNzh_TW
dc.citation.patentnumberI349943zh_TW
Appears in Collections:Patents


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