Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chang, Kow-Ming | en_US |
dc.contributor.author | Chao, Kuo-Yi | en_US |
dc.contributor.author | Chou, Ting-Wei | en_US |
dc.contributor.author | Chang, Chin-Tien | en_US |
dc.date.accessioned | 2014-12-08T15:13:42Z | - |
dc.date.available | 2014-12-08T15:13:42Z | - |
dc.date.issued | 2007-07-01 | en_US |
dc.identifier.issn | 0021-4922 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.46.4333 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/10607 | - |
dc.description.abstract | In this study. the zirconium oxide (ZrO2) membrane has been successfully applied as a pH-sensitive layer for ion-sensitive field-effect transistors (ISFETs). It exhibited an excellent response range of 56.7-58.3 mV/pH from the fixed current measurement using HP4156A. The ZrO2 membrane prepared by direct current (DC) sputtering was used as a pH-sensitive film that showed good surface adsorption with oxide and silicon. The pH sensitivities slightly decreased in 1 M NaCl solution; however. the device showed a perfect linear response of 52.5 mV/pH. The linear pH sensitivity response was measured between pH 1 to 13 in a buffer solution that was provided by Riedel-deHan. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | ZrO2 | en_US |
dc.subject | ISFET | en_US |
dc.subject | drift | en_US |
dc.subject | pH | en_US |
dc.subject | sensitivity | en_US |
dc.subject | MOSFET | en_US |
dc.title | Characteristics of zirconium oxide gate ion-sensitive field-effect transistors | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1143/JJAP.46.4333 | en_US |
dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | en_US |
dc.citation.volume | 46 | en_US |
dc.citation.issue | 7A | en_US |
dc.citation.spage | 4333 | en_US |
dc.citation.epage | 4337 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000248237100069 | - |
dc.citation.woscount | 8 | - |
Appears in Collections: | Articles |
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