標題: A Novel pH-dependent Drift Improvement Method for Zirconium Dioxide Gated pH-Ion Sensitive Field Effect Transistors
作者: Chang, Kow-Ming
Chang, Chih-Tien
Chao, Kuo-Yi
Lin, Chia-Hung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: drift;ISFET;pH-dependent;ZrO(2)
公開日期: 1-五月-2010
摘要: A novel compensation method for Zirconium dioxide gated Ion Sensitive Field Effect Transistors (ISFETs) to improve pH-dependent drift was demonstrated. Through the sequential measurements for both the n-channel and p-channel ISFETs, 75-100% pH-dependent drift could be successfully suppressed for the first seven hours. As a result, a nearly constant drift rate versus pH value was obtained, which increases the accuracy of pH measurements. Meanwhile, the drawback of the hyperbolic-like change with time of the common drift behavior for ISFETs was improved. A state-of-the-art integrated scheme adopting this method was also illustrated.
URI: http://dx.doi.org/10.3390/s100504643
http://hdl.handle.net/11536/5485
ISSN: 1424-8220
DOI: 10.3390/s100504643
期刊: SENSORS
Volume: 10
Issue: 5
起始頁: 4643
結束頁: 4654
顯示於類別:期刊論文


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