標題: | A Novel pH-dependent Drift Improvement Method for Zirconium Dioxide Gated pH-Ion Sensitive Field Effect Transistors |
作者: | Chang, Kow-Ming Chang, Chih-Tien Chao, Kuo-Yi Lin, Chia-Hung 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | drift;ISFET;pH-dependent;ZrO(2) |
公開日期: | 1-五月-2010 |
摘要: | A novel compensation method for Zirconium dioxide gated Ion Sensitive Field Effect Transistors (ISFETs) to improve pH-dependent drift was demonstrated. Through the sequential measurements for both the n-channel and p-channel ISFETs, 75-100% pH-dependent drift could be successfully suppressed for the first seven hours. As a result, a nearly constant drift rate versus pH value was obtained, which increases the accuracy of pH measurements. Meanwhile, the drawback of the hyperbolic-like change with time of the common drift behavior for ISFETs was improved. A state-of-the-art integrated scheme adopting this method was also illustrated. |
URI: | http://dx.doi.org/10.3390/s100504643 http://hdl.handle.net/11536/5485 |
ISSN: | 1424-8220 |
DOI: | 10.3390/s100504643 |
期刊: | SENSORS |
Volume: | 10 |
Issue: | 5 |
起始頁: | 4643 |
結束頁: | 4654 |
顯示於類別: | 期刊論文 |