標題: | Characteristics of zirconium oxide gate ion-sensitive field-effect transistors |
作者: | Chang, Kow-Ming Chao, Kuo-Yi Chou, Ting-Wei Chang, Chin-Tien 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | ZrO2;ISFET;drift;pH;sensitivity;MOSFET |
公開日期: | 1-七月-2007 |
摘要: | In this study. the zirconium oxide (ZrO2) membrane has been successfully applied as a pH-sensitive layer for ion-sensitive field-effect transistors (ISFETs). It exhibited an excellent response range of 56.7-58.3 mV/pH from the fixed current measurement using HP4156A. The ZrO2 membrane prepared by direct current (DC) sputtering was used as a pH-sensitive film that showed good surface adsorption with oxide and silicon. The pH sensitivities slightly decreased in 1 M NaCl solution; however. the device showed a perfect linear response of 52.5 mV/pH. The linear pH sensitivity response was measured between pH 1 to 13 in a buffer solution that was provided by Riedel-deHan. |
URI: | http://dx.doi.org/10.1143/JJAP.46.4333 http://hdl.handle.net/11536/10607 |
ISSN: | 0021-4922 |
DOI: | 10.1143/JJAP.46.4333 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS |
Volume: | 46 |
Issue: | 7A |
起始頁: | 4333 |
結束頁: | 4337 |
顯示於類別: | 期刊論文 |