標題: 以液相沉積成長二氧化鉿薄膜之方法
作者: 蕭智文
羅正忠
陳昶維
公開日期: 11-十二月-2009
摘要: 本發明關於利用液相沉積法以成長具有高介電常數之絕緣膜,特別是二氫化鉿絕緣層之方法,包括: (a)將二氧化鉿(HfO2)粉末加入氫氟酸(HF)溶液中,形成氫氟鉿酸鹽(HxHfyFz)溶液,並於低溫下加以攪拌溶解,使成為飽和溶液; (b)加入去離子水於該飽和溶液中,使其成為過飽和溶液; (c)將矽基板置入該過飽和溶液中,由於化學逆反應,可沉積高介電常數二氧化鉿(HfO2)薄膜於該矽基板上。 This invention relating to process using liquid phase deposition to form film of high dielectric material, particularly hafnium dioxide, which comprisses: (1) applying powdered hafnium dioxide into solution of hydrogen fluoride for preparing solution of HxHfyFz salts, and stirring the solution at low temperature to dissolve the salts to a saturated state; (2) adding de-ion water into said saturated solution and making it be a super-saturated state; (3) applying a silicon substrate into the super-saturated solution and depositing high dielectric hafnium dioxide on the surface of the substrate due to reversed chemical reaction in said solution.
官方說明文件#: C23C018/16
URI: http://hdl.handle.net/11536/106159
專利國: TWN
專利號碼: I318245
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