Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 吳正宇 | en_US |
| dc.contributor.author | 金星吾 | en_US |
| dc.date.accessioned | 2014-12-16T06:16:56Z | - |
| dc.date.available | 2014-12-16T06:16:56Z | - |
| dc.date.issued | 2009-08-11 | en_US |
| dc.identifier.govdoc | H01J001/02 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/106176 | - |
| dc.description.abstract | 一種尖端增強之微電漿元件,主要是利用微尖端結構具有很強的電場集中效應,乃於陰極板上設置有微尖端電極,可將電場局部集中於微尖端電極上,而易於在陰極板與陽極板間的放電空間中誘發出電漿現象,藉此達到降低電漿崩解電壓的效果。 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 尖端增強之微電漿元件 | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | TWN | zh_TW |
| dc.citation.patentnumber | I313476 | zh_TW |
| Appears in Collections: | Patents | |
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