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dc.contributor.author郭正次en_US
dc.contributor.author潘扶民en_US
dc.contributor.author陳柏林en_US
dc.contributor.author張峻愷en_US
dc.date.accessioned2014-12-16T06:17:00Z-
dc.date.available2014-12-16T06:17:00Z-
dc.date.issued2008-07-21en_US
dc.identifier.govdocB82B003/00zh_TW
dc.identifier.govdocC23C016/26zh_TW
dc.identifier.govdocC23C016/458zh_TW
dc.identifier.govdocC01B031/02zh_TW
dc.identifier.govdocB82B003/00zh_TW
dc.identifier.govdocC23C016/26zh_TW
dc.identifier.govdocC23C016/458zh_TW
dc.identifier.govdocC01B031/02zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/106228-
dc.description.abstract一種控制奈米碳管管束密度的方法,適於利用一化學氣 相沉積法在一陽極氧化鋁模板的奈米級孔洞內成長奈米碳 管,其特徵在於陽極氧化鋁模板係經由一電解拋光步驟和 之後的兩階段陽極氧化處理,以形成具有陣列排列的奈米 級孔洞;以及利用控制化學氣相沉積法的反應氣氛之種類 與比例,來控制奈米碳管之管束密度。因此,本發明能有 效提昇奈米碳管之應用性。zh_TW
dc.language.isozh_TWen_US
dc.title控制奈米碳管管束密度的方法與奈米碳管的製造方法zh_TW
dc.typePatentsen_US
dc.citation.patentcountryTWNzh_TW
dc.citation.patentnumberI299032zh_TW
Appears in Collections:Patents


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