Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 羅廣禮 | en_US |
| dc.contributor.author | 楊宗 | en_US |
| dc.contributor.author | 張翼 | en_US |
| dc.contributor.author | 張俊彥 | en_US |
| dc.date.accessioned | 2014-12-16T06:17:14Z | - |
| dc.date.available | 2014-12-16T06:17:14Z | - |
| dc.date.issued | 2006-08-21 | en_US |
| dc.identifier.govdoc | H01L021/38 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/106321 | - |
| dc.description.abstract | 本發明係揭露一種具有防止源汲極區摻雜離子在接面區外擴散的電晶體結構及其製作方法，其係於半導體基底上形成材質為具有摻雜離子的含碳-矽化鍺(SiGe：C)嵌入式源汲極，利用碳能夠抑制摻雜離子擴散的特性，來形成兼具低接觸電阻與能抑制摻雜離子擴散的源汲極區，進而提高元件的可靠度。 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 具有防止源汲極區摻雜離子在接面區外擴散的電晶體結構及其製作方法 | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | TWN | zh_TW |
| dc.citation.patentnumber | I260716 | zh_TW |
| Appears in Collections: | Patents | |
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