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dc.contributor.author柯明道en_US
dc.contributor.author徐國鈞en_US
dc.date.accessioned2014-12-16T06:17:25Z-
dc.date.available2014-12-16T06:17:25Z-
dc.date.issued2004-11-01en_US
dc.identifier.govdocH01L023/60zh_TW
dc.identifier.govdocH01L023/60zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/106421-
dc.description.abstract一種雙觸發矽控整流元件與使用其之靜電保護電路。此種雙觸發矽控整流元件係在一個P型基底中配置了數個 N+擴散區域、數個P+擴散區域、第一N型井區域、第二N型井區域和第三N型井區域。每一個N+擴散區域和P+擴散區域中間,都以淺溝渠結構加以隔離。在P+擴散區域內的其中二個,係雙觸發矽控整流元件的P型觸發區。而在N+擴散區域內的其中二個,係雙觸發矽控整流元件的N型觸發區。zh_TW
dc.language.isozh_TWen_US
dc.title雙觸發矽控整流元件與使用其之靜電保護電路zh_TW
dc.typePatentsen_US
dc.citation.patentcountryTWNzh_TW
dc.citation.patentnumberI223432zh_TW
Appears in Collections:Patents


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